NCE0130K Datasheet, NCE Power Semiconductor

* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson.

General Features
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24mΩ)
* Special process technology for h.

The NCE0130K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24mΩ)
* Specia.